maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 40 v average peak forward current i o 1.0 a non repetitive forward current (tp = 8.3ms) i fsm 20 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +125 c thermal resistance ja 286 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =5.0v 60 200 a i r v r =10v 85 300 a i r v r =20v 150 500 a i r v r =30v 250 800 a i r v r =40v 350 900 a bv r i r =1.0ma 40 v v f i f =100ma 300 mv v f i f =500ma 350 mv v f i f =1.0a 400 mv v f i f =1.5a 450 mv c t v r =10v, f=1.0mhz 50 pf description: the central semiconductor CMPSH1-4LE is an enhanced high current, low leakage, low v f , schottky barrier rectifier in a surface mount sot-23f package. it is suitable for all applications requiring premium performance in a small sized, high current schottky rectifier that offers both very low v f and leakage current specifications. CMPSH1-4LE surface mount silicon high current low v f , low leakage schottky barrier rectifier sot-23f case central semiconductor corp. tm r2 (30-september 2008) marking code: cse applications: ? load/power switches ? power supply converter circuits ? battery powered equipment including cell phones, digital cameras, pagers, pdas, etc. features: ? current (i f =1.0a) ? low forward voltage drop (v f =0.39v max @ 1.0a) ? low reverse current (150a typ @ v r =20v) ? small, surface mount, power sot-23f package
central semiconductor corp. tm sot-23f case - mechanical outline CMPSH1-4LE surface mount silicon high current low v f , low leakage schottky barrier rectifier r2 (30-september 2008) lead code: 1) anode 2) anode 3) cathode marking code: cse pin configuration optional mounting pads (for standard mounting pads see sot-23f package details)
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